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Heterogeneous magnetic memory architecture
专利权人:
EMPIRE TECHNOLOGIES DEVELOPMENT LLC
发明人:
Solihin Yan
申请号:
US201414308262
公开号:
US9858111(B2)
申请日:
2014.06.18
申请国别(地区):
美国
年份:
2018
代理人:
Morritt Hock & Hamroff LLP `Rubin, Esq. Steven S.
摘要:
Technologies are generally described for systems, devices and methods relating to multicore processors. The multicore processors may include first and second tiles with first and second caches, respectively. The first cache may include first magnetoresistive random access memory (MRAM) cells with first storage characteristics. The second cache may include second MRAM cells with second storage characteristics different from the first storage characteristics. In some examples, an interconnect structure may be coupled to the first and second tiles and may be configured to provide communication between the first tile and the second tile. Methods for handling migration between tiles and cores are also described.
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