BUFFER CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, OSCILLATOR, ELECTRONIC APPARATUS, AND BASE STATION

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专利权人:

SEIKO EPSON CORPORATION

发明人:

HAYASHI Kenji

申请号：

US201615332778

公开号：

US2017126221(A1)

申请日:

2016.10.24

申请国别(地区):

美国

年份:

2017

代理人:

摘要：

A buffer circuit includes a first MOSFET including a first source electrode, a first gate electrode, and a first drain electrode, and a second MOSFET, which includes a second source electrode, a second gate electrode, and a second drain electrode, and is same in polarity as the first MOSFET, and the first gate electrode and the second gate electrode are electrically connected to each other.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/