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ANISOTROPIC MATERIAL DAMAGE PROCESS FOR ETCHING LOW-K DIELECTRIC MATERIALS
专利权人:
GLOBALFOUNDRIES Inc.
发明人:
Ryan Errol Todd
申请号:
US201715407872
公开号:
US2017125288(A1)
申请日:
2017.01.17
申请国别(地区):
美国
年份:
2017
代理人:
摘要:
A device includes a first dielectric material and a plurality of conductive lines disposed in the first dielectric material. Each of the plurality of conductive lines includes a conductive fill material and a liner layer disposed between at least a bottom surface of the conductive fill material and the first dielectric material. The first dielectric material defines at least one air gap between two of the plurality of conductive lines. The at least one air gap has a first depth greater than a second depth of the plurality of conductive lines.
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中国工程科技知识中心
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