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Imaging panel and X-ray imaging system provided with said imaging panel
专利权人:
Sharp Kabushiki Kaisha
发明人:
Shigeyasu Mori,Kazuhide Tomiyasu
申请号:
US15320712
公开号:
US10347687B2
申请日:
2015.06.25
申请国别(地区):
US
年份:
2019
代理人:
摘要:
An aim of the present invention is to improve the conversion efficiency of scintillation light into electric charge by a photoelectric conversion element in an imaging panel of an X-ray imaging system using an indirection conversion scheme. An imaging panel generates images based on scintillation light acquired from X-rays that have passed through a specimen. The imaging panel includes a substrate, thin film transistor, photoelectric conversion element, and reflective layer. The thin film transistor is formed on the substrate. The photoelectric conversion element is connected to the thin film transistor and converts incident scintillation light into electric charge. The entirety of a region of a light-receiving surface of the photoelectric conversion element where the scintillation light is incident overlaps the reflective layer as seen from the incident direction of the scintillation light. The reflective layer may be the drain electrode. Alternatively, the reflective layer may be a reflective electrode that is formed in the same layer as a gate electrode.
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