炭素質薄膜
- 专利权人:
- トーヨーエイテック株式会社
- 发明人:
- 上原 健一,中谷 達行,岡本 圭司,川村 明
- 申请号：
- JP2007294273
- 公开号：
- JP5290564B2
- 申请日:
- 2007.11.13
- 申请国别(地区):
- JP
- 年份:
- 2013
- 代理人:
- 摘要：
PROBLEM TO BE SOLVED: To provide a carbonaceous thin film which does not easily cause peeling and cracks even when formed on the surface of a substrate which receives a large deformation and has high corrosion resistance.
SOLUTION: The carbonaceous thin film is formed on the surface of the substrate, and has a film main body containing a C-C component formed by the interconnection of carbon and an SiC component formed by the interconnection of carbon and silicon. The ratio of a silicon oxide component on the surface of the main body of the film is 0.05 or less.
COPYRIGHT: (C)2009,JPO&INPIT
- 来源网站：
- 中国工程科技知识中心
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