Hayakawa Junichiro,Murakami Akemi,Kondo Takashi,Takeda Kazutaka,Jogan Naoki,Sakurai Jun
申请号：
US201514795987
公开号：
US9502863(B2)
申请日:
2015.07.10
申请国别(地区):
美国
年份:
2016
代理人:
Sughrue Mion, PLLC
摘要：
Provided is a surface-emitting semiconductor laser including a substrate; a first semiconductor multilayer reflector of a first conductivity type formed on the substrate, the first semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a cavity region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductivity type formed on the cavity region, the second semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a columnar structure extending from the second semiconductor multilayer reflector to the cavity region; and a current confinement layer formed inside the columnar structure by selective oxidation of a semiconductor layer containing Al. The cavity region includes an active region; and a cavity extension region interposed between the active region and the first semiconductor multilayer reflector.
