YANG Jianhua,WILLIAMS Stanley,ZHANG Max,LI Zhiyong
申请号：
US201415500084
公开号：
US2017243924(A1)
申请日:
2014.12.19
申请国别(地区):
美国
年份:
2017
代理人:
摘要：
A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.
