Taiwan Semiconductor Manufacturing Company Limited
发明人:
Colinge Jean-Pierre,Liu Chia-Wen,Wu Wei-Hao,Wang Chih-Hao,Diaz Carlos H.
申请号：
US201715401171
公开号：
US9929245(B2)
申请日:
2017.01.09
申请国别(地区):
美国
年份:
2018
代理人:
Jones Day
摘要：
Semiconductor devices and methods for forming semiconductor devices are provided. A vertical channel structure extends from a substrate and is formed as a channel between a source region and a drain region. A first metal gate surrounds a portion of the vertical channel structure and has a gate length. The first metal gate has a first gate section with a first workfunction and a first thickness. The first metal gate also has a second gate section with a second workfunction and a second thickness. The first thickness is different from the second thickness, and the sum of the first thickness and the second thickness is equal to the gate length. A ratio of the first thickness to the second thickness is chosen to achieve a desired threshold voltage level for the semiconductor device.
