Compositions comprising base-reactive component and processes for photolithography
- 专利权人:
- ROHM AND HAAS ELECTRONIC MATERIALS LLC;DOW GLOBAL TECHNOLOGIES LLC
- 发明人:
- WANG, DEYAN,LIU, CONG,LI, MINGQI,OH, JOON SEOK,XU, CHENG-BAI,KANG, DORIS H.,CUMMINS, CLARK H.,OBER, MATTHIAS S.
- 申请号：
- EP20110189107
- 公开号：
- EP2453308(A1)
- 申请日:
- 2011.11.15
- 申请国别(地区):
- 欧洲专利局
- 年份:
- 2012
- 代理人:
- 摘要：
New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
- 来源网站：
- 中国工程科技知识中心
