Gordon Roy Gerald,Becker Jill S.,Hausmann Dennis,Suh Seigi
申请号：
US201615161903
公开号：
US9905414(B2)
申请日:
2016.05.23
申请国别(地区):
美国
年份:
2018
代理人:
Clark & Elbing LLP
摘要：
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido) hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
