Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (Ti 1-v Cr v ) x Al y (N 1-w O w ) z (where 0.0 < v < 1.0, 0.70 ‰¤ y/(x+y) ‰¤ 0.95, 0.45 ‰¤ z ‰¤ 0.55, 0 < w ‰¤ 0.35, and x+y+z = 1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.
