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SALICIDE STRUCTURES FOR HEAT-INFLUENCED SEMICONDUCTOR APPLICATIONS
专利权人:
BAE SYSTEMS Information and Electronic Systems Integration Inc.
发明人:
CAROTHERS, Daniel, N.
申请号:
EP20090810588
公开号:
EP2324494(A4)
申请日:
2009.08.27
申请国别(地区):
欧洲专利局
年份:
2017
代理人:
摘要:
A salicide heater structure for use in thermo-optic and other heat-influenced semiconductor devices is disclosed. In one example embodiment, a system is provided that includes a silicon substrate, and a salicide heating element formed on the substrate, for delivering heat radiation to a heat-influenced semiconductor device. Another example embodiment is a salicide semiconductor system that includes a silicon substrate and a salicide structure formed on the substrate, wherein the salicide structure is for delivering heat radiation to a heat-influenced semiconductor device.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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