Chromeless Phase Shift Mask Structure And Process

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专利权人:

Taiwan Semiconductor Manufacturing Co., Ltd.

发明人:

Lin Yun-Yue,Lee Hsin-Chang

申请号：

US201715597992

公开号：

US2018059531(A1)

申请日:

2017.05.17

申请国别(地区):

美国

年份:

2018

代理人:

摘要：

The present disclosure provides a phase shift mask. The phase shift mask includes a transparent substrate; an etch stop layer disposed on the substrate; and a tunable transparent material layer disposed on the etch stop layer and patterned to have an opening, wherein the tunable transparent material layer is designed to provide phase shift and has a transmittance greater than 90%.

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中国工程科技知识中心

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http://www.ckcest.cn/home/