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High speed surface plasmon coupled light emitting diodes
专利权人:
Agency for Science, Technology and Research;National University of Singapore
发明人:
Teo Ee Jin,Teng Jinghua,Yang Chengyuan,Bettiol Andrew
申请号:
US201414787122
公开号:
US9768347(B2)
申请日:
2014.04.28
申请国别(地区):
美国
年份:
2017
代理人:
Schwegman Lundberg & Woessner, P.A.
摘要:
A light emitting diode device (LED) is provided. The LED comprises a first-doped layer on a substrate, an active layer on the first-doped layer, a second-doped layer on the active layer, and a metal layer on the second-doped layer. The second-doped layer is patterned on a surface opposite to the active layer to define a first portion and a second portion. The first portion of the second-doped layer has a first portion thickness constrained for electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer thereby increasing the spontaneous emission rate of the LED. The second portion of the second-doped layer has a second portion thickness sufficient to ensure formation of a p-n junction in the LED.
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中国工程科技知识中心
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