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SPUTTERING TARGET AND SPUTTERING DEPOSITION METHOD USING SAME
专利权人:
SUMITOMO METAL MINING CO., LTD.
发明人:
WATANABE Hiroto
申请号:
WO2016JP65249
公开号:
WO2016194696(A1)
申请日:
2016.05.24
申请国别(地区):
世界知识产权组织国际局
年份:
2016
代理人:
摘要:
Provided is a sputtering target capable of reducing generation of particles resulting from abnormal discharge and arcing. This sputtering target is used for magnetron sputtering, and a plate-like member is detachably fitted in a non-erosion region located at the central portion of a target surface of the sputtering target. When the sputtering target is fitted in, the surface of the plate-like member on the target surface side is preferably almost flush with the target surface before the sputtering target is eroded or is preferably disposed at a position recessed from the target surface.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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