Steven J. Wojtczuk,Xuebing Zhang,William J. MacNeish, III
申请号：
US14858639
公开号：
US20160081552A1
申请日:
2015.09.18
申请国别(地区):
US
年份:
2016
代理人:
摘要：
Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.
