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ENHANCED VISIBLE NEAR-INFRARED PHOTODIODE AND NON-INVASIVE PHYSIOLOGICAL SENSOR
专利权人:
INC.;MASIMO SEMICONDUCTOR
发明人:
Steven J. Wojtczuk,Xuebing Zhang,William J. MacNeish, III
申请号:
US16743864
公开号:
US20200221953A1
申请日:
2020.01.15
申请国别(地区):
US
年份:
2020
代理人:
摘要:
Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode.
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中国工程科技知识中心
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