Single-crystal silicon carbide substrate, method for producing single-crystal silicon carbide substrate, and method for inspecting single-crystal silicon carbide substrate

• 收藏
• 分享

专利权人:

HITACHI METALS, LTD.

发明人:

Hirooka Taisuke,Okuda Hiroyuki

申请号：

US201615006423

公开号：

US10283351(B2)

申请日:

2016.01.26

申请国别(地区):

美国

年份:

2019

代理人:

Nixon Peabody LLP `Costellia Jeffrey L.

摘要：

A single-crystal silicon carbide substrate has a main surface having a surface roughness fulfilling Ra≤1 nm, and has a ratio of hidden scratches of less than 50%, where, in the case where the main surface is arbitrary observed at 50 or more observation points with a field of view having a diameter of 100 μm, the ratio of hidden scratches is defined by a value obtained by dividing the number of the observation points at which a striped hidden scratch having a length of at least 50 μm by the total number of the observation points.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/