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Bonding method for thin film diamond providing low vapor pressure at high temperature
专利权人:
The United States of America, as represented by the Secretary of the Navy
发明人:
Shaw Jonathan L.,Hanna Jeremy
申请号:
US201514961428
公开号:
US9914283(B2)
申请日:
2015.12.07
申请国别(地区):
美国
年份:
2018
代理人:
US Naval Research Laboratory `Hunnius Stephen T.
摘要:
A thin diamond film bonded to a diamond substrate made by the process of heating a diamond substrate inside a vacuum chamber to about 500° C., cooling the diamond substrate, coating a first surface of the diamond substrate with chromium, depositing an initial layer of palladium, heating the diamond substrate, allowing the chromium and the diamond substrate to form a chemical bond, inter-diffusing the adhesion layer of chromium and the initial layer of palladium, cooling, depositing palladium, placing a shadow mask, degassing the vacuum, depositing a tin layer, assembling the tin layer, heating the tin layer, melting the tin layer, and bonding the thin diamond film to the diamond substrate. A thin diamond film bonded to a diamond substrate comprising a thin diamond film, a layer of chromium, palladium, tin, and a diamond substrate.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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