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Semiconductor device with stacked structure of memory cells over sensing amplifiers, circuit board, and electronic device
专利权人:
Semiconductor Energy Laboratory Co., Ltd.
发明人:
Onuki Tatsuya,Kato Kiyoshi,Uesugi Wataru,Ishizu Takahiko
申请号:
US201514872535
公开号:
US9704562(B2)
申请日:
2015.10.01
申请国别(地区):
美国
年份:
2017
代理人:
Fish & Richardson P.C.
摘要:
A semiconductor device with low power consumption or a semiconductor device with a reduced area is provided. The semiconductor device includes a cell array including a first memory cell and a second memory cell; and a sense amplifier circuit including a first sense amplifier and a second sense amplifier. The cell array is over the sense amplifier circuit. The first sense amplifier is electrically connected to the first memory cell through a first wiring BL. The second sense amplifier is electrically connected to the second memory cell through a second wiring BL. The first sense amplifier and the second sense amplifier are electrically connected to a wiring GBL. The sense amplifier circuit is configured to select one of a potential of the first wiring BL and a potential of the second wiring BL and output the selected potential to the wiring GBL.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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