Xie Ruilong,Lim Kwan-Yong,Sung Min Gyu,Kim Ryan Ryoung-Han
申请号：
US201615168690
公开号：
US2017141211(A1)
申请日:
2016.05.31
申请国别(地区):
美国
年份:
2017
代理人:
摘要：
One illustrative integrated circuit product disclosed herein includes, among other things, a plurality of FinFET devices, each of which comprises a gate structure comprising a high-k gate insulation material and at least one layer of metal, a single diffusion break (SDB) isolation structure positioned in a first trench defined in a semiconductor substrate between first and second active regions, the SDB isolation structure comprising the high-k insulating material and the at least one layer of metal, and a double diffusion break (DDB) isolation structure positioned in a second trench defined in a semiconductor substrate between third and fourth active regions, the DDB isolation structure comprising a first insulating material that substantially fills the second trench.
