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SPUTTER DEPOSITION SOURCE, SPUTTER DEPOSITION APPARATUS AND METHOD OF OPERATING A SPUTTER DEPOSITION SOURCE
专利权人:
APPLIED MATERIALS, INC.;LINDENBERG, Ralph;BUSCHBECK, Wolfgang;LOPP, Andreas
发明人:
LINDENBERG, Ralph,BUSCHBECK, Wolfgang,LOPP, Andreas
申请号:
WO2016EP66551
公开号:
WO2018010770(A1)
申请日:
2016.07.12
申请国别(地区):
世界知识产权组织国际局
年份:
2018
代理人:
摘要:
According to one aspect of the present disclosure, a sputter deposition source (100) with at least one electrode assembly (120) configured for two-side sputter deposition is provided. The electrode assembly (120) comprises: a cathode (125) for providing a target material to be deposited, wherein the cathode is configured for generating a first plasma (131) on a first deposition side (10) and a second plasma (141) on a second deposition side (11) opposite to the first deposition side (10); and an anode assembly (130) with at least one first anode (132) arranged on the first deposition side (10) for influencing the first plasma and at least one second anode (142) arranged on the second deposition side (11) for influencing the second plasma. According to a second aspect, a deposition apparatus with a sputter deposition source (100) is provided. Further, methods of operating a sputter deposition source are provided.
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http://www.ckcest.cn/home/

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