FIELD: instrumentation. SUBSTANCE: method can find use for determination of distribution of components of thin film in depth when multilayer thin-film structures and semiconductor devices are manufactured. In correspondence with method thin film in the form of round spots is applied on to two substrates identical by their properties. One substrate is utilized to establish depth of one-layer-at-a-time analysis. Another substrate is used to determine distribution of components of thin film by depth of etching which is performed by results of analysis of time spectrum of secondary ions corresponding to film and substrate taken in process of substrate arrangement in mass spectrometer and by depth of one-layer-at-a-time analysis of first substrate. Substrate is rotated with angular velocity of 1 rpm as minimum during filming of time spectrum of secondary ions. EFFECT: increased precision of determination of distribution of components of thin film in depth. 2 dwg
