CHEN Jrjyan Jerry,CHOI Soo Young,NOMINANDA Helinda,WU Wen-Hao
申请号：
US201615055269
公开号：
US2017250370(A1)
申请日:
2016.02.26
申请国别(地区):
美国
年份:
2017
代理人:
摘要：
Embodiments of the disclosure provide interface integration and adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of enhancing interface adhesion and integration in a film structure disposed on a substrate includes performing a plasma treatment process on an inorganic layer disposed on a substrate in a processing chamber to form a treated layer on the substrate, wherein the substrate includes an OLED structure, controlling a substrate temperature less than about 100 degrees Celsius, and forming an organic layer on the treated layer. Furthermore, an encapsulating structure for OLED applications includes an inorganic layer formed on an OLED structure on a substrate, an electron beam treated layer formed on the inorganic layer, and an organic layer formed on the electron beam treated layer.
