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Epitaxial structure and epitaxial growth method for forming epitaxial layer with cavities
专利权人:
LEXTAR ELECTRONICS CORPORATION
发明人:
Chen Jun-Rong,Chou Hsiu-Mei,Ye Jhao-Cheng
申请号:
US201514694617
公开号:
US9601661(B2)
申请日:
2015.04.23
申请国别(地区):
美国
年份:
2017
代理人:
Moser Taboada
摘要:
An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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