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半導体スイッチ回路、信号処理装置、および、超音波診断装置
专利权人:
株式会社;日立パワーデバイス
发明人:
本多 啓伸,山下 史哲,相沢 淳一
申请号:
JP2013196862
公开号:
JP6154705B2
申请日:
2013.09.24
申请国别(地区):
JP
年份:
2017
代理人:
摘要:
A semiconductor switch circuit (90) comprises: a first switch pair (81) including two MOSFETs(811, 812) having gates connected one another and sources connected to one another, and a zener diode (ZD1) reversely connected between the gates and sources of the MOSFETs a second switch pair (82) including two MOSFETs (821, 822) having gates connected one another and sources connected to one another, and a zener diode (ZD2) reversely connected between the gates and sources of the MOSFETs and a third switch pair (83) comprising two MOSFETs (831, 832) having gates connected to one another and sources connected to one another. The first switch pair (81) and the second switch pair (82) are connected in series between two input/output terminals through a connecting node. The third switch pair (83) is connected to the connecting node between the first switch pair and the second switch pair.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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