INTEGRATED DEVICE WITH P-I-N DIODES AND VERTICAL FIELD EFFECT TRANSISTORS

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专利权人:

International Business Machines Corporation

发明人:

CHENG KANGGUO,LI JUNTAO,WANG GENG,ZHANG QINTAO

申请号：

US201715698041

公开号：

US2018053758(A1)

申请日:

2017.09.07

申请国别(地区):

美国

年份:

2018

代理人:

摘要：

An integrated device is provided. The integrated device includes a substrate having a doped upper surface section and an insulator to define first and second substrate regions on opposite sides thereof. Vertical transistors are operably arranged on the doped upper surface section at the first substrate region. P-I-N diodes are operably arranged on the doped upper surface section at the second substrate region.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/