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METAL OXIDE, AND SEMICONDUCTOR DEVICE HAVING SAID METAL OXIDE
专利权人:
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人:
YAMAZAKI, Shunpei
申请号:
WO2017IB53614
公开号:
WO2018011648(A1)
申请日:
2017.06.19
申请国别(地区):
世界知识产权组织国际局
年份:
2018
代理人:
摘要:
Provided is a novel metal oxide. Specifically provided is a metal oxide having a plurality of energy gaps, wherein the metal oxide is provided with a first layer in which the energy level at the bottom of the conduction band of the energy band is high and a second layer in which the energy level at the bottom of the conduction band of the energy band is lower than that of the first layer, the second layer has more carriers than the first layer, the difference between the energy levels at the bottom of the conduction band in the first layer and the second layer is at least 0.2 eV, and the first layer and the second layer are alternately layered.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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