インプラント用材料及びその製造方法
- 专利权人:
- 国立大学法人広島大学
- 发明人:
- 二川 浩樹,牧平 清超,峯 裕一,阿部 義紀,中谷 達行,岡本 圭司,新田 祐樹
- 申请号：
- JP2007316095
- 公开号：
- JP5327934B2
- 申请日:
- 2007.12.06
- 申请国别(地区):
- JP
- 年份:
- 2013
- 代理人:
- 摘要：
PROBLEM TO BE SOLVED: To obtain a material for implantation, inhibiting the differentiation from precursor osteoclast to osteoclast and hardly causing its own deterioration even in case a large load is applied thereon.
SOLUTION: The material for implantation includes a base material and a carbonaceous thin film formed on the surface of the base material and containing silicon. In this material for implantation, the carbonaceous thin film includes a C-C component where carbon atoms are bound to each other and an SiC component where a carbon atom and a silicon atom are bound to each other, wherein the ratio of the SiC component is 0.06 or greater.
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- 来源网站：
- 中国工程科技知识中心
