您的位置: 首页 > 农业专利 > 详情页

TECHNIQUES TO ENGINEER NANOSCALE PATTERNED FEATURES USING IONS
专利权人:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人:
RUFFELL, Simon,HAUTALA, John,BRAND, Adam,DAI, Huixiong
申请号:
WO2016US35417
公开号:
WO2016209580(A1)
申请日:
2016.06.02
申请国别(地区):
世界知识产权组织国际局
年份:
2016
代理人:
摘要:
A method of patterning a substrate. The method may include providing a surface feature on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, and wherein the surface feature has a third dimension along the first direction different than the first dimension.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

意 见 箱

匿名:登录

个人用户登录

找回密码

第三方账号登录

忘记密码

个人用户注册

必须为有效邮箱
6~16位数字与字母组合
6~16位数字与字母组合
请输入正确的手机号码

信息补充