SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人:
HU, Tao
申请号：
WO2015CN87728
公开号：
WO2017016008(A1)
申请日:
2015.08.21
申请国别(地区):
世界知识产权组织国际局
年份:
2017
代理人:
摘要：
Provided are a method for growing graphene on a surface of a grid electrode and a method for growing graphene on surfaces of source and drain electrodes. A low-temperature plasma enhanced vapor deposition manufacturing procedure is used to generate, on a grid electrode or source and drain electrodes containing copper, a graphene thin film having a controllable film thickness and being overlapped with a pattern of the grid electrode or the source and drain electrodes, wherein the preparation temperature of the graphene is relatively low, so that the structure of a thin film transistor can be minimally damaged, an adopted carbon source has a wide range of sources and is low cost, the manufacturing method is simple, and existing PECVD equipment in a thin film transistor production line can be used without increasing the cost. The grid electrode or the source and drain electrodes covered with the graphene are prevented from coming into contact with water and oxygen due to the protective effect of the graphene, so
