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Memory with low current consumption and method for reducing current consumption of a memory
专利权人:
Etron Technology, Inc.
发明人:
Shiah Chun
申请号:
US201414297645
公开号:
US9773533(B2)
申请日:
2014.06.06
申请国别(地区):
美国
年份:
2017
代理人:
Hsu Winston
摘要:
A method for reducing current consumption of a memory is disclosed, wherein the memory includes a controller and a plurality of banks, and each bank of the plurality of banks includes a plurality of segments. The method includes the controller enabling an activating command corresponding to a first row address and an address of a first bank of the plurality of banks; a word line switch of a segment of the first bank corresponding to the first row address being turned on according to the activating command; the controller enabling an access command corresponding to an address of the segment; a plurality of bit switches corresponding to the segment being turned on according to the access command; and the controller enabling a pre-charge command corresponding to an address of a following segment and the address of the first bank after the access command is disabled.
来源网站:
中国工程科技知识中心
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