Taiwan Semiconductor Manufacturing Company Limited
发明人:
Colinge Jean-Pierre,Liu Chia-Wen,Wu Wei-Hao,Wang Chih-Hao,Diaz Carlos H.
申请号：
US201414469682
公开号：
US9564431(B2)
申请日:
2014.08.27
申请国别(地区):
美国
年份:
2017
代理人:
Jones Day
摘要：
A semiconductor structure is provided comprising a vertical channel structure extending from a substrate and formed as a channel between a source region and a drain region. The semiconductor structure further comprises a metal gate that surrounds a portion of the vertical channel structure. The metal gate has a gate length. The metal gate has a first gate section with a first workfunction and a first thickness. The metal gate also has a second gate section with a second workfunction and a second thickness. The first thickness level is different from the second thickness level and the sum of the first thickness level and the second thickness level is equal to the gate length. The ratio of the first thickness level to the second thickness level for the gate length was chosen to achieve a threshold voltage level for the semiconductor device.
