METHOD FOR PRODUCING TRENCH-LIKE DEPRESSIONS IN THE SURFACE OF A WAFER

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专利权人:

Klaus KADEL

发明人:

Klaus KADEL

申请号：

US13856637

公开号：

US20130263847A1

申请日:

2013.04.04

申请国别(地区):

US

年份:

2013

代理人:

摘要：

In a method of producing trench-like depressions (24) in the surface of a wafer (27), particularly a silicon wafer, by plasma etching, in which the depressions (24) are produced by alternate passivation and etching, each depression (24) in its final geometry is provided with a protective layer (30) of the polytetrafluoroethylene type.

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