METHOD FOR DIVIDING PATTERN FOR EXPOSING ELECTRON BEAM, COMPLEMENTARY DIVISION MASK AND METHOD FOR EXPOSING ELECTRON BEAM

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专利权人:

NEC ELECTRONICS CORP

发明人:

OBA FUMIHIRO

申请号：

JP20040060095

公开号：

JP2005251963(A)

申请日:

2004.03.04

申请国别(地区):

日本

年份:

2005

代理人:

摘要：

PROBLEM TO BE SOLVED: To reduce the deterioration of the characteristics of a semiconductor device due to the deformation of a connecting part by minimizing the number of connecting parts on a diffusion layer. SOLUTION: The pattern length of a gate line GL formed in the upper layer of a diffusion layer RS of a wafer SI is grasped, and sub-field division is carried out by arranging connecting parts DP1 and DP3 in an NRS outside the region of the diffusion layer RS so that the number of sub-field connecting parts DP2 on the diffusion layer RS can be minimized. COPYRIGHT: (C)2005,JPO&NCIPI

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