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Trench formation with CD less than 10nm for replacement fin growth
专利权人:
APPLIED MATERIALS, INC.
发明人:
Zhang Ying,Chung Hua
申请号:
US201514673033
公开号:
US9553147(B2)
申请日:
2015.03.30
申请国别(地区):
美国
年份:
2017
代理人:
Patterson & Sheridan, LLP
摘要:
Embodiments described herein generally relate to methods of forming sub-10 nm node FinFETs. Various processing steps may be performed on a substrate to provide a trench over which a dielectric layer is conformally deposited. The dielectric layer is subsequently etched within the trench to expose the underlying substrate and a semiconductive material is deposited in the trench to form a fin structure. The processes of forming the trench, depositing the dielectric layer, and forming the fin structure can achieve sub-10 nm node dimensions and provide increasingly smaller FinFETs.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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