A plasma etching method includes a first step of attracting a substrate (S) onto a monopolar electrostatic chuck (15) in a first plasma (PL1), which is a plasma of a noble gas, and stopping generation of the first plasma (PL1) after the attracting of the substrate, and a second step of etching the substrate (S) in a second plasma (PL2), which is a plasma of a halogen-based etching gas, and stopping generation of the second plasma (PL2) after the etching of the substrate. In the first step, the generation of the first plasma (PL1) is stopped when a positive voltage is applied from the monopolar electrostatic chuck (15) to the substrate (S). In the second step, the generation of the second plasma (PL2) is stopped when a negative voltage is applied from the monopolar electrostatic chuck (15) to the substrate (S).
