Semiconductor device, electronic component, and electronic device including memory cell comprising first transistor, second transistor and capacitor

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专利权人:

Semiconductor Energy Laboratory Co., Ltd.

发明人:

Matsuzaki Takanori,Inoue Hiroki

申请号：

US201615090733

公开号：

US9601429(B2)

申请日:

2016.04.05

申请国别(地区):

美国

年份:

2017

代理人:

Fish & Richardson P.C.

摘要：

A highly reliable semiconductor device. In a configuration where a precharged source line is discharged to a bit line by establishing electrical continuity between the source line and the bit line through a transistor to read a potential retained at a gate of the transistor, the potential of the bit line is switched in accordance with a change in potential of the source line due to the discharge. With this configuration, the voltage between the source and drain of the transistor can be kept lower than a predetermined voltage by discharge. Accordingly, the source-drain voltage of the transistor can be kept lower than its breakdown voltage, so that the semiconductor device can have high reliability.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/