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Cross-point memory single-selection write technique
专利权人:
Intel Corporation
发明人:
Taub Mase J,Guliani Sandeep K.,Pangal Kiran
申请号:
US201615189314
公开号:
US9685204(B2)
申请日:
2016.06.22
申请国别(地区):
美国
年份:
2017
代理人:
Compass IP Law PC
摘要:
A system and technique is disclosed for writing data in a cross-point memory. The state of one or more memory cells of the cross-point memory are sensed and then are continued to be selected and left on. It is then determined which of the one or more memory cells are to change state based on incoming user data that is to be written into the one or more memory cells. The one or more memory cells determined to change state and are still selected to be on are then written by applying a write-current pulse to the memory cells. In one exemplary embodiment, the one or more memory cells comprise one or more phase-change-type memory cell devices.
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