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Resistance structure, integrated circuit, and method of fabricating resistance structure
专利权人:
LAPIS SEMICONDUCTOR CO., LTD.
发明人:
Ohtake Hisao
申请号:
US201514722067
公开号:
US9576898(B2)
申请日:
2015.05.26
申请国别(地区):
美国
年份:
2017
代理人:
Studebaker & Brackett PC
摘要:
A resistance structure including: a conductive layer provided at a surface layer portion of a semiconductor substrate; a first resistance element having long sides and short sides provided over the conductive layer with an insulating film interposed; a second resistance element having long sides and short sides provided over the conductive layer with the insulating film interposed and disposed such that one long side thereof opposes one long side of the first resistance element; first wiring that is connected to one end of the first resistance element; second wiring that is connected to one end of the second resistance element; third wiring that connects the other end of the first resistance element with the other end of the second resistance element; and a connection portion that connects any of the first wiring, the second wiring and the third wiring with the conductive layer.
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