SEMICONDUCTING GRAPHENE STRUCTURES, METHODS OF FORMING SUCH STRUCTURES AND SEMICONDUCTOR DEVICES INCLUDING SUCH STRUCTURES

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专利权人:

Micron Technology, Inc.

发明人:

MEADE, Roy E.,PANDEY, Sumeet C.

申请号：

EP20140833003

公开号：

EP3027556(A4)

申请日:

2014.07.15

申请国别(地区):

欧洲专利局

年份:

2017

代理人:

摘要：

A semiconducting graphene structure may include a graphene material and a graphene-lattice matching material over at least a portion of the graphene material, wherein the graphene-lattice matching material has a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material. The semiconducting graphene structure may have an energy band gap of at least about 0.5 eV. A method of modifying an energy band gap of a graphene material may include forming a graphene-lattice matching material over at least a portion of a graphene material, the graphene-lattice matching material having a lattice constant within about ±5% of a multiple of the lattice constant or bond length of the graphene material.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/