GaN circuit drivers for GaN circuit loads

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专利权人:

NAVITAS SEMICONDUCTOR, INC.

发明人:

Kinzer Daniel M.,Sharma Santosh,Zhang Ju Jason

申请号：

US201514737259

公开号：

US9716395(B2)

申请日:

2015.06.11

申请国别(地区):

美国

年份:

2017

代理人:

Kilpatrick Townsend & Stockton

摘要：

An electronic circuit is disclosed. The electronic circuit includes a substrate having GaN, and a power switch formed on the substrate and including a first control gate and a first source. The electronic circuit also includes a drive circuit formed on the substrate and including an output coupled to the first control gate, and a power supply having a supply voltage and coupled to the drive circuit, where the output can be driven to the supply voltage.

来源网站：

中国工程科技知识中心

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http://www.ckcest.cn/home/