Non-intrusive measurement of a wafer DC self-bias in semiconductor processing equipment

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专利权人:

APPLIED MATERIALS, INC.

发明人:

Belostotskiy Sergey G.,Dinh Chinh,Nguyen Andrew,Chafin Michael G.

申请号：

US201414283159

公开号：

US9601301(B2)

申请日:

2014.05.20

申请国别(地区):

美国

年份:

2017

代理人:

Blakely, Sokoloff, Taylor & Zafman LLP

摘要：

A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/