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Semiconductor Devices Including Gate Structures With Oxygen Capturing Films
专利权人:
Samsung Electronics Co., Ltd.
发明人:
Kim Ju-youn,KIM Hyun-jo
申请号:
US201615355726
公开号:
US2017148792(A1)
申请日:
2016.11.18
申请国别(地区):
美国
年份:
2017
代理人:
摘要:
A semiconductor device includes: a semiconductor substrate including an active region and a gate structure on the active region. The gate structure includes a gate insulating film; a work function adjusting film on the first gate insulating film; a separation film on the work function adjusting film; and an oxygen capturing film on the separation film and configured to capture oxygen introduced from the outside of the first gate structure. The oxygen capturing film is spaced apart from a top surface of the first gate insulating film by about 70 Å to about 80 Å.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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