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High density patterned material on integrated circuits
专利权人:
MACRONIX INTERNATIONAL CO., LTD.
发明人:
Lee Guan-Ru
申请号:
US201614996014
公开号:
US9673051(B1)
申请日:
2016.01.14
申请国别(地区):
美国
年份:
2017
代理人:
Haynes Beffel & Wolfeld LLP
摘要:
An integrated circuit comprises a plurality of strips of material over a substrate, the plurality of strips including strips S(i), each strip S(i) for i going from 3 to n having a first segment and a second segment separated by a gap from the first segment. The integrated circuit comprises a plurality of landing areas, the plurality of landing areas including landing areas A(i), each landing area A(i) for i going from 3 to n−2 connecting a first segment of strip S(i) in the plurality of strips with a second segment of strip S(i+2) in the plurality of strips, and disposed within the gap between the first and second segments in strip S(i+1). The strips S(i) have a first pitch in a direction orthogonal to the strips, and the landing areas A(i) have a second pitch twice the first pitch in the direction orthogonal to the strips of material.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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