METHOD OF PRODUCING SEMICONDUCTOR DEVICE HAVING SILICON UNITLOCALLY PROVIDED WITH BURIED OXIDE LAYER
- 专利权人:
- 发明人:
- 申请号：
- JP19840088732U
- 公开号：
- JPS614539(U)
- 申请日:
- 1984.06.14
- 申请国别(地区):
- 日本
- 年份:
- 1986
- 代理人:
- 摘要：
- 来源网站：
- 中国工程科技知识中心
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