METHOD OF GROWING EPITAXIAL FILMS OF DISILICIDE STRONGATION AT SILICON

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专利权人:

Federalnoe gosudarstvennoe byudzhetnoe uchrezhdenie "Natsionalnyj issledovatelskij tsentr "Kurchatovskij institut"

发明人:

Averyanov Dmitrij Valerevich,Koroleva Anastasiya Fedorovna,Tokmachev Andrej Mikhajlovich,Storchak Vyacheslav Grigorevich

申请号：

RU20160133018

公开号：

RU2620197(C1)

申请日:

2016.08.10

申请国别(地区):

俄罗斯

年份:

2017

代理人:

摘要：

FIELD: chemistry.SUBSTANCE: method of growing epitaxial films of strontium disilicide on a silicon substrate by molecular beam epitaxy is to deposit an atomic strontium stream with a pressureP=(0,5÷3)×10Torr on pre-cleaned and heated toT=500±20°C the surface of the silicon substrate to the formation of the strontium disilicide film of the required thickness.EFFECT: creation of technology for the formation of SrSiepitaxial films by the method of molecular-beam epitaxy, the orientation of which is determined by the substrate, which will allow us to grow films with different predetermined properties.3 cl, 4 dwg

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