Park, Joon-seok,Kim, Sun-jae,Kim, Tae-sang,Kim, Hyun-suk,Ryu, Myung-kwan,Seo, Seok-jun,Seon, Jong-baek,Son, Kyoung-seok,Lee, Sang-yoon
申请号：
EP20130195425
公开号：
EP2741335(B1)
申请日:
2013.12.03
申请国别(地区):
欧洲专利局
年份:
2017
代理人:
摘要：
According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.
