High-voltage normally-off field effect transistor with channel having multiple adjacent sections

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专利权人:

Sensor Electronic Technology, Inc.

发明人:

Simin Grigory,Shur Michael,Gaska Remigijus

申请号：

US201514984408

公开号：

US9748362(B2)

申请日:

2015.12.30

申请国别(地区):

美国

年份:

2017

代理人:

Labatt, LLC

摘要：

A device having a channel with multiple voltage thresholds is provided. The channel can include a first section located adjacent to a source electrode, which is a normally-off channel and a second section located between the first section and a drain electrode, which is a normally-on channel. The device can include a charge-controlling electrode connected to the source electrode, which extends from the source electrode over at least a portion of the second section of the channel. During operation of the device, a potential difference between the charge-controlling electrode and the channel can control the on/off state of the normally-on section of the channel.

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中国工程科技知识中心

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http://www.ckcest.cn/home/