石英ルツボの改質方法及びシリコン単結晶の製造方法

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专利权人:

信越半導体株式会社

发明人:

木村 明浩

申请号：

JP20130261592

公开号：

JP6070528(B2)

申请日:

2013.12.18

申请国别(地区):

日本

年份:

2017

代理人:

摘要：

PROBLEM TO BE SOLVED: To provide: a method for modifying a quartz crucible, capable of sufficiently and efficiently modifying the inner surface of the quartz crucible and improving a no-dislocation rate of the silicon single crystal; a method for manufacturing the silicon single crystal using the quartz crucible modified by the modifying method; and the quartz crucible modified by the modifying method.SOLUTION: The method for modifying a quartz crucible includes heating the quartz crucible before use at a temperature equal to or more than a fictive temperature and 1450°C or less in an inert gas atmosphere using a single crystal manufacturing apparatus by a Czochralski method.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/